HAZEL ASSENDER

HAZEL ASSENDER

University of Oxford, UK



Biography

Hazel E Assender graduated from the University of Cambridge, followed with a PhD and two years of Postdoc in the Department of Materials Science & Metallurgy in Cambridge before moving to an academic post in Oxford University. She has led a research activity in the Department of Materials, University of Oxford, UK since 1996 with a focus in the area of thin films and coatings both of polymer materials or onto polymer substrates. Her research spans fundamental studies of the thin film and near-surface prop­erties of polymers, through to materials engineering of thin films and device structures in large area on polymer substrates. Her particular areas of inter­est include roll-to-roll deposition, gas barriers, photovoltaics, and transistors/ circuits. Her research has a technology-facing approach bringing underpin­ning scientific understanding to development of materials and technologies that integrates research relevant to industrial processing such as scale-up of manufacture with the development of new materials and structures.

Abstract

The breakthrough of flexible electronics depends upon suitable large-scale manufacturing routes, likely requiring very low cost, high-throughput processing techniques. Our approach to development of organic electronics considered high-speed roll-to-roll processing routes already employed industrially. We examined their applicability in creating transistors and circuits. Central to this is the high-throughput deposition of polymeric dielectric using a vacuum deposition route compatible with the preferred processing for molecular semiconductors, metal contacts and ceramic or other semiconducting active components. This paper will discuss the control of dielectric properties as determined by processing parameters during the thin-film deposition and by the surface segregation of one component of a monomer mixture to control interfacial properties of the dielectric. The dielectric performance will be demonstrated in OTFT devices and circuit elements.